SBIR/STTR Research Award

SBIR Phase I:Novel Structure for Efficient and Reliable Medium Voltage Silicon Carbide (SiC) Power Devices

Award identifier 28b8757ccb8aa7eadd40701ff55a61b64e810cf15259dbd1f9cfee345ecfd014Awarding agency National Science Foundation

Award amount

$255,909

Program and phase

SBIR · Phase I

Award year

2022

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Award details

Awarding agency
National Science Foundation
Branch
Not reported
Recipient company
NOMIS POWER CORPORATION
Proposal award date
2021-11-15
Contract end date
2023-04-30
UEI
MQKPC5MHRN99
Solicitation number
NSF 21-562
Topic code
PM

Research abstract

The broader impact/commercial potential of this Small Innovation Research (SBIR) Phase I project is to improve the efficiency and reliability power conversion systems (PCSs) while also reducing the complexity and cost. System builders and end-users of power electronics for PCS may benefit from proposed advancements in power semiconductor technology that are translated to cheaper and more resilient and sustainable electricity generation, distribution, and consumption. The interconnections of distributed energy resources and energy storage systems within DC (direct current) micro-grids and interfaces between DC micro-grids and legacy AC (alternating current) distribution grid networks will be made simpler, more efficient, and more reliable when the proposed power semiconductor devices become ubiquitous within future PCS.This Small Business Innovation Research (SBIR) Phase I project will improve advanced power semiconductor processing techniques. Specifically, the project focuses on: 1) developing a reliable semiconductor-based, high power electronic switch in the form of a SiC MOSFET (Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor), 2) optimizing the electronic switch parameters to achieve the best trade-off between efficiency and reliability, and 3) fully characterizing the electrical performance of the electronic switch. The research will involve the design of experiments to determine the optimal set of electronic switch parameters that take into account manufacturing limitations of the semiconductor processing equipment. The teams seeks to produce a functioning semiconductor-based, high power electronic switch that is capable of operating more reliably and more efficiently than what is presently available in the market.The team also seeks to enable even higher power electronic switches to be made by means of scaling the resultant SiC MOSFET technology.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

5 SBIR/STTR records share this UEI (2021–2024). Reported award amounts total $1,017,410. Reported amounts are not federal obligations.

Phases: Phase I

Agencies: Department of Energy, Department of Defense, National Science Foundation

Agency intelligence

National Science Foundation

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