Manufacturing Platform for High-Temperature CMOS ICs on SiC
Award amount
$156,403Program and phase
SBIR · Phase IAward year
2021Award details
- Awarding agency
- Department of Defense
- Branch
- Defense Microelectronics Activity
- Recipient company
- NOMIS POWER CORPORATION
- Proposal award date
- 2021-07-29
- Contract end date
- 2022-02-10
- UEI
- MQKPC5MHRN99
- Solicitation number
- 21.1
- Topic code
- DMEA211-001
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Full-SiC 3.3 kV, 200 A Half-Bridge Power Module Demonstrating Resilient Performance and Robust Multi-Layer Power Delivery
- Highly integrated, low cost SiC power modules with modified substrates for high performance and ease of manufacturing
- SBIR Phase I:Novel Structure for Efficient and Reliable Medium Voltage Silicon Carbide (SiC) Power Devices
- 6.5 kV, 100 A SiC Power Module Technology to Meet 21st Century Energy Demands
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Highly-Integrated SiC BiCMOS/Power Device Technology: Design, Modeling, and Reliability Metrics
- 4H-SiC BiCMOS Development on 6â wafers in a High-Volume Production Foundry
Research funding history
5 SBIR/STTR records share this UEI (2021–2024). Reported award amounts total $1,017,410. Reported amounts are not federal obligations.
Phases: Phase I
Agencies: Department of Energy, Department of Defense, National Science Foundation