Radiation Hardened By Design (RHBD) Electronics Based on On-Shore 22nm FinFET Technology

There is a need for development of very hard Radiation-Hardened-By-Design (RHBD) fin field-effect transistor (FinFET or FF) products and Intellectual Property (IP) based on USA-based 22nm FF process technology optimized for Radio Frequency (RF) and mmWave applications. Alphacore, with Arizona State University research partner, proposes innovative, very-hard IP blocks with novel RHBD designs implemented in an on-shore 22nm FF technology (Intel 22FFL) for 1) resilience to natural space and man-made radiation environments, and 2) use in Alphacore’s RHBD analog/mixed-signal IP, like phase-locked loop (PLL), analog-to-digital converter (ADC), digital-to-analog converter (DAC), time-to-digital converter (TDC), digital read-out integrated circuit (DROIC), serializers, preamplifiers, filters, voltage references, and input/output (I/O) circuitry. Such circuits will be 1) tolerant to energetic particle and prompt dose exposure, and 2) suitable for DoD detectors needing low noise charge amplifiers and filters, very high rate imaging circuits, high-precision charge and timing measurement circuits, low-power and small-area ADCs and TDCs. Approved for Public Release |21-MDA-10789 (21 Apr 21)