SiC CMOS Integrated-Circuit High-Temperature Sensing Platform with Enhanced Gate Oxide Reliability
Award amount
$1,499,989Program and phase
SBIR · Phase IIAward year
2021Award details
- Awarding agency
- Department of Defense
- Branch
- Defense Advanced Research Projects Agency
- Recipient company
- COOLCAD ELECTRONICS, INC.
- Proposal award date
- 2021-02-01
- Contract end date
- 2023-03-31
- UEI
- FJELK5N54RS3
- Solicitation number
- 19.101
- Topic code
- HR001119S0035-01
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Vertically Integrated Silicon Carbide/Silicon Detectors for UV/Vis Multicolor Sensing
- Silicon Carbide Transient Voltage Suppressor for Aircraft Use
- Next Generation SiC APD Deep-UV Single-Photon Detectors
- Highly Efficient 15kW CLLC Resonant Converter System for Military Vehicles, Built Using Wide Bandgap-Based Power Electronics
- Integrated SiC Photodiode Arrays for UV-Spectroscopic Applications
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Extreme Environment Sensors and Associated Electronics
- Distributed Optical Sensing System Development for Hypersonic Applications
- High-Temperature Sensors
- High-Temperature Instrumentation for the Advancement of Hypersonic Engine Development
- Extreme Environment Sensors and Associated Electronics
Research funding history
44 SBIR/STTR records share this UEI (2007–2025). Reported award amounts total $16,309,579. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: National Aeronautics and Space Administration, Department of Defense, National Science Foundation, Department of Energy