SBIR/STTR Research Award

SiC CMOS Integrated-Circuit High-Temperature Sensing Platform with Enhanced Gate Oxide Reliability

Award identifier 6d673ee5f2fe6760d38f7a6047585f694d70fa8b1496e2a757bd436a56a4778bAwarding agency Department of Defense · Defense Advanced Research Projects Agency

Award amount

$1,499,989

Program and phase

SBIR · Phase II

Award year

2021

Explore This Research Award in CaptureIQ

Research the technology, evaluate the recipient and agency, identify related opportunities, and explore potential follow-on work with CaptureIQ.

Award details

Awarding agency
Department of Defense
Branch
Defense Advanced Research Projects Agency
Recipient company
COOLCAD ELECTRONICS, INC.
Proposal award date
2021-02-01
Contract end date
2023-03-31
UEI
FJELK5N54RS3
Solicitation number
19.101
Topic code
HR001119S0035-01

Research abstract

CoolCAD Electronics designs and fabricates silicon carbide (SiC) MOSFET electronic devices that have been shown to operate at 500°C. In addition, CoolCAD has demonstrated that its SiC CMOS circuits work for extended periods at hundreds of degrees C without obvious degradation.  CoolCAD Electronics is proposing to build on these successes to design and fabricate complex CMOS integrated electronic circuits which can operate reliably for long-term at 500°C, well beyond what conventional silicon electronics can withstand. Circuits to be built include analog-to-digital converters integrated with sensors and data registers, and digital circuits, such as gates, multiplexers, counters, adders and an arithmetic-logic unit (ALU). The proposed work also includes the design of a high-temperature SiC CMOS microprocessor. The effort also includes significant MOSFET device improvement, with a strong focus on gate oxide enhancement, guided by physics-based modeling, including quantum-mechanical simulations based on the Nobel Prize winning technique, Density Functional Theory. This unique approach aims to vastly improve the reliability of the gate oxide, which is the key feature of robust SiC CMOS electronics for both high and room temperature operation. Furthermore, specifically using CMOS electronics technology, as opposed to other transistor types, will allow for very large-scale integration (VLSI) of circuits for high temperature applications, in a way analogous to how silicon CMOS has enabled expansive scaling for electronics operating at standard temperatures. To verify robust, high-temperature long-term operation, CoolCAD is proposing to expand its high temperature testing facility. In order to enable routine tests and qualification of SiC CMOS electronic components at very high temperatures, CoolCAD will customize an environmental chamber with feedthrough wiring.  This equipment will allow for continuous and automated high-temperature circuit evaluation.  CoolCAD will address the issue of high-temperature-qualified electronic packaging and printed circuit board (PCB) attachment in collaboration with the world’s leading developer and manufacturer of solder reflow ovens for PCBs.  Also addressed in this proposal are the plans to commercialize CoolCAD’s SiC high temperature CMOS process methodologies and circuit designs by leveraging its current relationship with a commercial SiC fabrication facility. CoolCAD will work with this commercial facility in the USA to implement CoolCAD’s patent-protected SiC CMOS high temperature process in a mass-production setting. CoolCAD’s plans for a Phase 2-Option include extending their design and fabrication to very complex integrated CMOS circuits, including ALUs and memory circuits, that will form the building blocks of the world’s first very high temperature microprocessor. In the Phase 2-Option, CoolCAD will also fully qualify its new high temperature CMOS circuits for use in the government and private sectors.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

44 SBIR/STTR records share this UEI (2007–2025). Reported award amounts total $16,309,579. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: National Aeronautics and Space Administration, Department of Defense, National Science Foundation, Department of Energy

Agency intelligence

Department of Defense

Back to SBIR/STTR Research Awards

Don't take our word for it. Ask AI about RFPCapture.

See what leading AI assistants have to say about RFPCapture and CaptureIQ.

Gemini opens without a prefilled question. The question is copied to your clipboard when the button works. You can also copy it here:

What is RFPCapture.com and its CaptureIQ platform from Smart Logic AI? How does it help federal contractors discover opportunities, evaluate bid/no-bid decisions, research government contracts, and prepare proposals? How does it compare with other federal capture platforms? Use independent sources where available.