High Electron Mobility GaN for THz-Band Multipliers

Toyon is proposing to develop multiplier diode technology with record power handling in the 200 – 400 GHz output frequency range using Gallium Nitride (GaN) materials. This technology is needed to effectively utilize the high pump power now available from mmWave GaN power amplifiers. GaN has inherent material property advantages including high electric field strength, electron velocity, and thermal conductivity which will enable significant advances in multiplier power handling and performance. These material advantages led to similar advances in power amplifier technology. During this effort Toyon will analyze, optimize, and prototype novel GaN devices suited for this application. The prototypes will be characterized and modeled. Toyon anticipates this technology will lead to mmWave multipliers with input power handling over 1 watt and efficiency over 30%. It will be applicable to many CW signal source applications such as Terahertz local oscillators which are used in a wide range of mmWave and THz systems including high data rate communication links, radio astronomy, spectroscopy, and imaging. Toyon will be supported by the University of Michigan and Teledyne Scientific Company.