Solar Blind UV APD based on III-N Material Systemfor UV Spectroscopy and Imaging Applications

This Small Business Innovation Research (SBIR) project seeks to developnbsp; avalanche photodiode (APD) and its array, for solar-blind detection in UV wavelengths ranging from 200 nm to 250 nm for nbsp;space applications. The solar-blind UV APD is based on III-nitride (III-N) technology.nbsp; The ultra-wide bandgap (UWB) of AlXGa1-XN material system enables to achieve highly efficient, radiation-hard detectors capable of operating at high temperatures in the solar-blind UV regime without the need for external filters. The proposed solar-blind UV-APD will be capable to have high gain and low dark current (few pico amperes) so that the array of which can be used for solar blind imaging. nbsp;In Phase I, we will perform material growth and characterization to achieve high quality AlGaN material system, verifying the material quality and performance in the solar blind ranges by making device. Design-simulation of APD device follows to optimize the structural parameters. In Phase II, the proposed solar-blind UV APD devices will be further optimized, fabricated, packaged as arrays and evaluated for high multiplication gain and low noise performance. We anticipate achieving a sufficiently high yield on large area substrates for economic production of large format for space applications as well as defense, and commercial bio-chemical systems applications.