High Temperature By Design (HTBD) Techniques for a Reliable, High Performance Microcontroller
Award amount
$749,903Program and phase
SBIR · Phase IIAward year
2020Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- OZARK INTEGRATED CIRCUITS INC
- Proposal award date
- 2020-07-15
- Contract end date
- 2022-07-15
- UEI
- C3JNF19C7DK8
- Solicitation number
- 18.2
- Topic code
- AF182-061
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- High-Temperature Flow Rate Instrument for Geothermal Reservoir Monitoring
- Packaging Methods for Reliable and Scalable High Temperature Electronics
- System Integration of Non-Volatile Ferroelectric Memory for High Temperature Applications
- High-Temperature Flow Rate Instrument for Geothermal Reservoir Monitoring
- A 4H-SiC Thin-Film Process for the Manufacture of UV-Detecting VISIR-Blind Integrated Circuits
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
Research funding history
37 SBIR/STTR records share this UEI (2012–2024). Reported award amounts total $19,866,110. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Energy, National Aeronautics and Space Administration, Department of Defense, National Science Foundation