SBIR/STTR Research Award

Efficient, Pixeled, and Electronically Controllable Wafer Scaled NV Centers for Advancement of Quantum Applications

Award identifier e16c67e592b0c8f5aa02998a4b5d1c1deb146a4d560c8e390573a937be632d78Awarding agency Department of Defense · Air Force

Award amount

$150,000

Program and phase

STTR · Phase I

Award year

2020

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Award details

Awarding agency
Department of Defense
Branch
Air Force
Recipient company
BLUE WAVE SEMICONDUCTORS INC
Proposal award date
2020-06-16
Contract end date
2020-12-16
UEI
KTDJGRR8NL34
Solicitation number
20.A
Topic code
AF20A-T002

Research abstract

This STTR Phase I project proposes to develop innovative heterojunction quantum optical switchable diode for quantum technology applications and quantum technology hardware developers. To eliminate technological barriers, we are teaming with the University of Maryland College Park (STTR-partner) to support feasibility studies and demonstrate electronically switchable 2D quantum Schottky devices. The main features of the project are: 1) scalable thin film process for quantum defect centers, 2) fabrication of innovative pixels of switchable quantum optical Schottky diode fast switching device, 3) characterizing and analyzing quantum processes addressable in quantum devices, and 4) bridge the gap from R&D to commercialization of quantum technologies.  Phase I feasibility studies include optimization of defect centers from the surface of the epitaxial layers integrated on compatible scalable substrates and enhancement of optical signals through surface optical engineering accounting high quantum efficiency of measurements. The multilayer and epitaxial engineering of defect centers pixeled through innovatiove layers will allow localized, addressable and electronic control of quantum states.  We plan to develop new device architecture using its 2-dimentional device structures with an optimum concentration of quantum centers for quantum optical process and increase efficiency of optical process and emission by 15%. Then develop and feasibility test active control of the charge state of a single defect center by using transparent metal/diamond nanoscale Schottky junction optical devices. Overall goal is to lead the development of advanced quantum sensing system for DOD customers and quantum communication market and plan for commercialization. Based on the success of this Phase-I STTR, further activities will expand into Phase II proposal, manufacturing and scale-up requirements of the DOD customers working on quantum technologies. The benefits of this product and technology to DOD are to apply newly developed technologies and/or processes to advance the quantum enabling technologies and applications advancing scientific and military dominance for national security interests.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

12 SBIR/STTR records share this UEI (2002–2024). Reported award amounts total $3,602,614. Reported amounts are not federal obligations.

Phases: Phase I, Phase II, Phase II – Direct to Phase II

Agencies: Department of Defense, National Science Foundation

Agency intelligence

Department of Defense

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