SBIR/STTR Research Award

High Electron Mobility GaN Growth for High Breakdown Schottky Barrier Tuning Diodes

Award identifier 737399dbe167f2ddec8566c7f751b83dd2f8ba35fc4c468e2437e868343e533aAwarding agency Department of Defense · Air Force

Award amount

$49,993

Program and phase

STTR · Phase I

Award year

2020

Award details

Awarding agency: Department of Defense
Branch: Air Force
Recipient company: TOYON RESEARCH CORPORATION
Proposal award date: 2020-03-06
Contract end date: 2020-06-04
UEI: PK1CB3L39XX8
Solicitation number: X20.A
Topic code: AF20A-TCSO1

Research abstract

Toyon Research Corporation and the University of Michigan propose to conduct a study on epitaxial GaN growth with Germanium and Silicon donors. Silicon is typically used to dope GaN n-type, but electron concentrations above 3E18 cm-3 result in degraded surface morphology of the GaN. Epitaxial GaN with a variety of electron concentrations will be grown with both types of donors. The epitaxial GaN layers will be analyzed with an atomic force microscope to quantify the RMS surface roughness of each sample. The samples will then be characterized with Lehighton and Hg-CV to quantify the conductivity of the layers of each sample. The goal is to achieve highly conductive films with low RMS surface roughness.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

601 SBIR/STTR records share this UEI (1986–2026). Reported award amounts total $249,287,075. Reported amounts are not federal obligations.

Phases: Phase I, Phase II, Phase II – Direct to Phase II

Agencies: Department of Defense, Department of Commerce, Department of Homeland Security, National Aeronautics and Space Administration, Department of Transportation, Department of Energy