SBIR/STTR Research Award

Integrated On-Chip Power for Harsh Environments

Award identifier 1fee1abb2378e621bc1fc891529c635ba5490f9e4d1583e08faa4b6a55dab866Awarding agency National Aeronautics and Space Administration

Award amount

$750,000

Program and phase

SBIR · Phase II

Award year

2019

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Award details

Awarding agency
National Aeronautics and Space Administration
Branch
Not reported
Recipient company
COOLCAD ELECTRONICS, INC.
Proposal award date
2019-08-14
Contract end date
2021-08-13
UEI
FJELK5N54RS3
Solicitation number
SBIR_18_P2
Topic code
S4

Research abstract

CoolCAD Electronics proposes the development of a silicon carbide (SiC) based motor controller suitable for most stepper motors. The silicon carbide motor controller will be designed and fabricated to operate at extremely high temperature and high radiation environments, beyond the reach of a typical silicon-based motor controller.To demonstrate a successful SiC motor controller, we will fabricate SiC power devices as well as SiC gate drivers. At the component level, we will characterize their electrical and physical properties. Simultaneously, we will design and fabricate SiC CMOS integrated circuits such as control logic and timing circuitry. At the board level, will minimize gate driver parasitics, EMI and noise issues, as well as detect and mitigate faults. At the module level, we will design a proof-of-concept SiC motor controller, operable at high temperatures, and will test the controllerrsquo;s electrical and thermal performances under a wide variety of loading conditions.At high temperatures, silicon has an abundance of intrinsic carriers, resulting in a loss of junction control and preventing proper device operation. For bulk silicon electronics, the threshold beyondnbsp;which device control is lost is approximately 175C. Our SiC CMOS technology has been shown to operate at high temperaturesnbsp;as high as 500C.Ultimately, our proposal addresses a niche application that cannot be addressed by silicon.nbsp; This is achieved bynbsp;combiningnbsp;ournbsp;high temperature and radiation tolerant silicon carbide low voltage integrated circuit technology, with a silicon carbide based power device. Specifically, our proposal focuses on high temperature capable designs in order to meet the power requirements for robotic science probes and instrumentation.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

44 SBIR/STTR records share this UEI (2007–2025). Reported award amounts total $16,309,579. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: National Aeronautics and Space Administration, Department of Defense, National Science Foundation, Department of Energy

Agency intelligence

National Aeronautics and Space Administration

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