Integrated Silicon Carbide Electronics for Venus Surface Actuation
Award amount
$754,517Program and phase
SBIR · Phase IIAward year
2019Award details
- Awarding agency
- National Aeronautics and Space Administration
- Branch
- Not reported
- Recipient company
- OZARK INTEGRATED CIRCUITS INC
- Proposal award date
- 2019-07-29
- Contract end date
- 2021-07-28
- UEI
- C3JNF19C7DK8
- Solicitation number
- SBIR_18_P2
- Topic code
- S4
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- High-Temperature Flow Rate Instrument for Geothermal Reservoir Monitoring
- Packaging Methods for Reliable and Scalable High Temperature Electronics
- System Integration of Non-Volatile Ferroelectric Memory for High Temperature Applications
- High-Temperature Flow Rate Instrument for Geothermal Reservoir Monitoring
- A 4H-SiC Thin-Film Process for the Manufacture of UV-Detecting VISIR-Blind Integrated Circuits
Research funding history
37 SBIR/STTR records share this UEI (2012–2024). Reported award amounts total $19,866,110. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Energy, National Aeronautics and Space Administration, Department of Defense, National Science Foundation