Dual Ka/Q-Band Low Noise Amplifiers

This proposal details the development of a state of the art ultra broadband mHEMT low noise amplifier using a DoD approved domestic foundry. Protecting the circuit up to 1W of incident power levels is an external PIN limiter. A core part of this proposal is solving the problem of packaging Ka-band and Q-band circuits in surface mount solutions which is key to reducing SWAP-C in our assemblies. Our approach has been to optimize all three identified possible solutions (QFN internal optimization, flip chip, and hot via) for applicability. The end result of this contract will be a definitive guide as to the best approach for packaging these devices to MMW and higher frequencies. The final packaged design will exhibit greater than 20dB gain, and noise figure less than 2dB, from 27-47GHz while withstanding power levels of over 1W with no damage.