Optimizing InAs/InAsSb transport using predictive electronic structure code for carrier dynamics including Auger recombination

A model will be developed and validated for electronic transport calculations using a highly accurate, predictive electronic structure code that currently produces electronic structure, optical absorption, radiative and Auger recombination rates for InAs/InAsSb strained-layer superlattices from 5K-300K. The approach will use the novel formulation of Auger recombination pioneered at U. Iowa which divides the electron-electron scattering process into electronic response properties with a given momentum and energy, that are then connected by the Coulomb interaction matrix element. This approach will be extended to intraband scattering for electron-electron relaxation, and supplemented by scattering cross-sections obtained from realistic dopants and defects, and also bulk and superlattice phonon calculations. The results will be verified by evaluating vertical and lateral transport in mid-wavelength infrared and long-wavelength infrared InAs/InAsSb superlattices. Combined with the carrier recombination rates already available from this software the quantum efficiencies of these superlattices will be predicted.