SBIR/STTR Research Award

Rapid Manufacturing Method for HighTemperature Turbine Components

Award identifier 1c7e9034d3ca0ef5f5e3f3b5c91669ddcba88f45f0481d404a969918955305baAwarding agency Department of Energy

Award amount

$999,765

Program and phase

SBIR · Phase II

Award year

2016

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Award details

Awarding agency
Department of Energy
Branch
Not reported
Recipient company
Mikro Systems, Inc.
Proposal award date
2016-08-01
Contract end date
2018-07-31
UEI
R34XDKSM3KU9
Solicitation number
DE-FOA-0001490
Topic code
15b

Research abstract

for the batteries, PM motor and electric drive train while simultaneously reducing weight. Increasing the drive train conversion efficiency has a significant impact as it extends battery life, vehicle range and allows for a reduction of heavy cooling components through the reduction of heat generating losses. Therefore much attention is placed on increasing the efficiency of the traction power inverter that drives the electric motor. It is well documented that inverter efficiency and power density can be increased while simultaneously reducing weight through the use of Silicon Carbide (SiC) wide bandgap semiconductors. For example, demonstrations of inverters utilizing SiCJFETs and SiCMOSFETs are emerging, where the efficiencies are reaching >99% with 10X increased power densities. However, today’s electric vehicle motor drive applications require high current (200400A) power modules. SiC devices have been limited to lower current (<50A) due to the material defects, lower yields and higher costs associated with large area devices. For the electric vehicle traction inverters, it is of great interest to push up the SiC device current to 100200A per device to make full use of the SiC system. Material defect densities have dropped dramatically in recent years as the commercial acceptance of the SiC Schottky diode have driven higher volume and more state of the art semiconductor fabrication. To address topic 17b, USCi proposes in Phase II to fabricate 200A 650V and 1200V 100A SiC Schottky Diodes on 6” diameter wafers. The high current diodes will complete reliability automotive qualifications in Phase II. The diodes will be copackaged with Si switches to form hybrid modules and benefits estimated. When integrated, the SiC diodes will increase the efficiency of electric motor power conversion from the battery to the drive train. Key Words: Silicon Carbide, Diodes, Electric Vehicle, Inverters, High Current

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

23 SBIR/STTR records share this UEI (2001–2016). Reported award amounts total $10,014,920. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, Department of Energy, Department of Health and Human Services, National Aeronautics and Space Administration

Agency intelligence

Department of Energy

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