Novel Reactive Defect Reduction Polishing Technology for Scalable Production of ElectronicDiamond Wafers
Award amount
$99,999Program and phase
SBIR · Phase IAward year
2016Award details
- Awarding agency
- Department of Defense
- Branch
- Army
- Recipient company
- Sinmat Inc
- Proposal award date
- 2016-07-06
- Contract end date
- 2017-01-05
- UEI
- EKDLPTKX33M6
- Solicitation number
- 2016.1
- Topic code
- A16-021
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Novel Ultra-High Rate Finishing Processes for Production of 100 mm Epi-ready GaN Substrates Title on abstract leaves out the word "Novel")
- Efficient Manufacturing of Low Defect Density SiC Substrates using a Novel Defect Capped Planarization Assisted Growth (DC-PAG) Method
- Innovative Polishing Technology for Fabrication of High Performance Epi-ready GaSb Substrates
- Production of Reduced Defect Density (112) Silicon Wafers Utilizing Ultra- Gentle, Chemical Mechanical Smoothening (CMS) Process
- SBIR Phase I: Low Cost Scalable Manufacturing of Patterned Sapphire Substrates (PSS) for High Efficiency LEDs
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Electronic grade, single crystal or large-grain polycrystalline diamond wafer development.
- Development of Large Area Electronic Grade Single Crystal Diamond Wafers
- Electronic grade, single crystal or large-grain polycrystalline diamond wafer development.
- Toroidal Plasma CVD Growth of Large Area Single Crystal Diamond Wafers
Research funding history
42 SBIR/STTR records share this UEI (2002–2016). Reported award amounts total $12,792,050. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Science Foundation, Department of Energy