Development of Large Area Electronic Grade Single Crystal Diamond Wafers
Award amount
$999,893Program and phase
SBIR · Phase IIAward year
2017Award details
- Awarding agency
- Department of Defense
- Branch
- Army
- Recipient company
- KYMA TECHNOLOGIES, INC.
- Proposal award date
- 2017-06-30
- Contract end date
- 2020-05-09
- UEI
- GDV6R1VLRVN7
- Solicitation number
- 16.1
- Topic code
- A16-021
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Low-Cost Manufacturing of High Quality GaN Substrates
- Pulsed Sputter Deposition (PSD) for Efficient Doping for GaN HEMT Contacts
- HVPE-Based Gallium Oxide Epiwafer Development
- High Responsivity Optical GaN Switch
- Radiation-Tolerant Vertical GaN Diodes
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Electronic grade, single crystal or large-grain polycrystalline diamond wafer development.
- Electronic grade, single crystal or large-grain polycrystalline diamond wafer development.
- Novel Reactive Defect Reduction Polishing Technology for Scalable Production of ElectronicDiamond Wafers
- Toroidal Plasma CVD Growth of Large Area Single Crystal Diamond Wafers
Research funding history
83 SBIR/STTR records share this UEI (2000–2024). Reported award amounts total $34,128,798. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration