SBIR/STTR Research Award
Low Power Monolayer MoS2 Transistors for RF Applications
Award amount
$150,000Program and phase
STTR · Phase IAward year
2014Award details
- Awarding agency
- Department of Defense
- Branch
- Army
- Recipient company
- KYMA TECHNOLOGIES, INC.
- Proposal award date
- 2014-08-28
- Contract end date
- 2015-02-22
- UEI
- GDV6R1VLRVN7
- Solicitation number
- 2014.A
- Topic code
- A14A-T008
Research abstract
Utilizing a novel solid/gas source CVD reactor designed for the growth of large area (substrates up to 4"in diameter) MoS2 single layer (SL) and multiple layer (ML) films, and leveraging already demonstrated capabilities in the growth and fabrication of 2D-FETs based on graphene and WSe2, we are proposing the growth, fabrication and testing of MoS2-based RF FETs. Utilizing a novel and optimized source/drain contact approach, the targeted performance of these FETs is to achieve ft and fmax>5 GHz, while handling a DC power>10µW and an RF power output>1.0µW.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Low-Cost Manufacturing of High Quality GaN Substrates
- Pulsed Sputter Deposition (PSD) for Efficient Doping for GaN HEMT Contacts
- HVPE-Based Gallium Oxide Epiwafer Development
- High Responsivity Optical GaN Switch
- Radiation-Tolerant Vertical GaN Diodes
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Low Power Monolayer MoS2 Transistors for RF Applications
- Two-Dimensional MoS2 Transistors for Low-Power RF Applications
- Low Power Monolayer MoS2 Transistors for RF Applications
Research funding history
83 SBIR/STTR records share this UEI (2000–2024). Reported award amounts total $34,128,798. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration