SBIR/STTR Research Award
High Operating Temperature Long Wave HgCdTe Focal Plane Arrays
Award amount
$99,836Program and phase
SBIR · Phase IAward year
2015Award details
- Awarding agency
- Department of Defense
- Branch
- Army
- Recipient company
- IRDT Solutions, Inc
- Proposal award date
- 2015-09-30
- Contract end date
- 2016-03-29
- UEI
- CM79JETRFLC5
- Solicitation number
- 2015.1
- Topic code
- A15-024
Research abstract
Phase I work will focus on demonstrating the feasibility of our approach to significantly reduce the Shockley-Read related centers in Long wavelength HgCdTe and increase the minority carrier lifetime so that the dark currents can be controlled to less than 3E-6 Amps/cm2 at > 90 K for a cut-off wavelength larger than 10 microns and in addition the temperature of operation be scalable to 120 K.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Dislocation reduction in LWIR HgCdTe epitaxial layers grown on alternate substrates
- An improved passivation process for the fabrication of high performance antimony based III-V superlattice materials
- Dislocation reduction in LWIR HgCdTe epitaxial layers grown on alternate substrates
- Defect Reduction Techniques for Large Format Infrared Detector Materials
- Development and Demonstrattion of High Performance Infrared Focal Plane Arrays with Advanced Quantum Structures
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- HgCdTe Material Improvements for High Operating Temperatures
- High Operating Temperature Long Wave HgCdTe Focal Plane Arrays
- HgCdTe Material Improvements for High Operating Temperatures
Research funding history
7 SBIR/STTR records share this UEI (2010–2015). Reported award amounts total $1,139,371. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense