SBIR/STTR Research Award
Dislocation reduction in LWIR HgCdTe epitaxial layers grown on alternate substrates
Award amount
$149,975Program and phase
SBIR · Phase IAward year
2012Award details
- Awarding agency
- Department of Defense
- Branch
- Army
- Recipient company
- IRDT Solutions, Inc
- Proposal award date
- 2012-05-06
- Contract end date
- 2012-11-02
- UEI
- CM79JETRFLC5
- Solicitation number
- 2012.1
- Topic code
- A12-024
Research abstract
Phase I objective is to demonstrate the feasibility of our approach to reduce the dislocation density to below 1E5 cm-2 in LWIR HgCdTe epitaxial layers grown on Si substrates. Phase II objective is to demonstrate dislocation density to below 1E5 cm-2 reproducibly in LWIR HgCdTe epitaxial layers grown on 3 inch diameter Si substrates and to demonstrate high performance LWIR focal plane arrays in 2Kx2K or larger formats.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- High Operating Temperature Long Wave HgCdTe Focal Plane Arrays
- Dislocation reduction in LWIR HgCdTe epitaxial layers grown on alternate substrates
- An improved passivation process for the fabrication of high performance antimony based III-V superlattice materials
- Defect Reduction Techniques for Large Format Infrared Detector Materials
- Development and Demonstrattion of High Performance Infrared Focal Plane Arrays with Advanced Quantum Structures
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
Research funding history
7 SBIR/STTR records share this UEI (2010–2015). Reported award amounts total $1,139,371. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense