SBIR/STTR Research Award
Dislocation reduction in LWIR HgCdTe epitaxial layers grown on alternate substrates
Award amount
$519,799Program and phase
SBIR · Phase IIAward year
2013Award details
- Awarding agency
- Department of Defense
- Branch
- Army
- Recipient company
- IRDT Solutions, Inc
- Proposal award date
- 2013-09-06
- Contract end date
- 2013-10-24
- UEI
- CM79JETRFLC5
- Solicitation number
- 2012.1
- Topic code
- A12-024
Research abstract
The technical objective of the Phase II effort is to implement the ideas developed in Phase I work to improve the thermal cycle annealing procedures and HgCdTe epitaxial growth procedures with the goal to demonstrate our approach to reduce the dislocation density to ~1x105 cm-2 and lower in LWIR HgCdTe epitaxial layers grown on Si substrates with a cut off wavelength of ~10 m at 77 K. At the end of the Phase II effort, the goal is to demonstrate fabrication of focal plane arrays of up to 2Kx2K size in Si substrate based LWIR HgCdTe, with new state of the art in detectivity performance, uniformity, operability and producibility.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- High Operating Temperature Long Wave HgCdTe Focal Plane Arrays
- An improved passivation process for the fabrication of high performance antimony based III-V superlattice materials
- Dislocation reduction in LWIR HgCdTe epitaxial layers grown on alternate substrates
- Defect Reduction Techniques for Large Format Infrared Detector Materials
- Development and Demonstrattion of High Performance Infrared Focal Plane Arrays with Advanced Quantum Structures
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
Research funding history
7 SBIR/STTR records share this UEI (2010–2015). Reported award amounts total $1,139,371. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense