SBIR/STTR Research Award
Planar, Low Switching Loss, Gallium Nitride Devices for Power Conversion Applications
Award amount
$150,000Program and phase
SBIR · Phase IAward year
2012Award details
- Awarding agency
- Department of Defense
- Branch
- Navy
- Recipient company
- Finwave Semiconductor Inc.
- Proposal award date
- 2012-05-07
- Contract end date
- 2013-09-06
- UEI
- U6PQDHYHLHS3
- Solicitation number
- 2012.1
- Topic code
- N121-090
Research abstract
Cambridge Electronics will develop a new generation of power electronic switches based on gallium nitride (GaN) semiconductors. These switches will be optimized for 1000-V operation and switching frequencies in excess of 1 MHz. To maximize the device performance, this project will demonstrate a new fabrication technology that significantly increases the breakdown voltage of GaN transistors and reduces their leakage current and on resistance. The threshold voltage of these devices will be in excess of 1 V.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Planar, Low Switching Loss, Gallium Nitride Devices for Power Conversion Applications
- Gallium Nitride (GaN)-based High Efficiency Switch/Transistor for L-Band RF Power Amplifier Applications
- Planar, Low Switching Loss, Gallium Nitride Devices for Power Conversion Applications
- Gallium Nitride (GaN)-based High Efficiency Switch/Transistor for L-Band RF Power Amplifier Applications
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Planar, Low Switching Loss Bulk InAlN/GaN Based HEMTS for Power Conversion Applications
- Normally-OFF AlInN/GaN MISHFET with composite channel
Research funding history
5 SBIR/STTR records share this UEI (2012–2017). Reported award amounts total $1,405,331. Reported amounts are not federal obligations.
Phases: Phase II, Phase I
Agencies: Department of Defense