Development of Mid-UV Semiconductor Laser Diodes

High quality, strained AlGaN thin films are a prerequisite for low dislocation density active regions of laser structures and effective doping of cladding layers. Based on our recent work and groundbreaking results, we propose a comprehensive program for development of AlGaN-based laser diodes that includes: modeling and design of the active region, epitaxial growth, characterization, and optimization (quantum efficiency, gain) of quantum structures, development of n- and in p-doping in the cladding layers, as well as development of Ohmic contacts, and, finally, fabrication of an electrically-driven prototype of a mid-UV laser diode exceeding output power of 10 mW.