SBIR/STTR Research Award
Solar Blind MgZnO Photodetectors
Award amount
$999,042Program and phase
STTR · Phase IIAward year
2014Award details
- Awarding agency
- Department of Defense
- Branch
- Army
- Recipient company
- AGNITRON TECHNOLOGY, INC.
- Proposal award date
- 2014-09-29
- Contract end date
- 2015-10-29
- UEI
- NGDVGM4G1YM4
- Solicitation number
- 2013.0
- Topic code
- A13A-T006
Research abstract
This project address the fabrication of solar blind detectors from the MgZnO material system. Both MBE and MOCVD material growth techniques will be used for deposition of the required material layers. Simulation software we be used to aid in the design of the photodetector structure. Devices will be fabricated from the grown structures and their electrical and optical characteristics determined.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Industrial Scale Ga2O3 Epitaxial Structures for Next-Generation Microwave Electronics
- Enabling Industry scalable GaN-based Technology for Heterogeneous Integration of RF power devices Via van der Waals 2D h BN Release layer
- Develop Ultra-Fast Metastable Ion Implant Activation System
- Miniature power supplies using beta-Ga2O3 electronics for size, weight, and power reduction on low-cost, attritable aircrafts
- Develop Ultra-Fast Metastable Ion Implant Activation System
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
Research funding history
16 SBIR/STTR records share this UEI (2013–2024). Reported award amounts total $11,320,870. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Defense, National Science Foundation, National Aeronautics and Space Administration, Department of Energy