GaN High-Power Low-Loss C3-varactor RF switch MMIC

WWe propose to develop novel low-loss high-power fully planar GaN C3 (Capacitively-Coupled-Contact) varactor RF switch MMIC with switching time well below 300 ns. The use of GaN material system offers radical device performance improvement over MEMS, pin-diode and other switch types due to an extremely high electron sheet density, high electron channel mobility at AlInGaN/GaN heterointerface, record high breakdown field and operating temperature. The C3 varactors are gate alignment free devices without high-temperature annealed ohmic contacts. These features allow C3 varactors, while maintaining all the key advantages of GaN transistor technology, to achieving even lower loss, higher switching power and better technological yield. Highly controllable SET Inc. patented MEMOCVD growth in conjunction with patented insulated-gate fabrication processes will ensure high MMIC yield exceeding 80%. The use of technologies and manufacturing capabilities readily available at the proposer"s facilities guaranties rapid commercialization and system insertion of these novel devices leading to transformative changes in the modern RF systems such as electronically scanned radars, communication systems etc. employed in NAVY and the other DoD branches as well as in a broad range of commercial applications.