Normally-OFF AlInN/GaN MISHFET with composite channel

We propose to develop new key building blocks for next generation power electronics based on III-Nitride semiconductor technology. High-voltage, low-loss, normally-off III-Nitride insulated gate heterostructure field-effect transistor (MISHFET) is based on innovative and patent-pending composite-channel design, which monolithically integrates normally-off and normally-on sections sharing the same two-dimensional electron gas (2DEG) channel. This new technology uses strain-free AlInN/GaN heterostructures to obtain record low sheet and channel resistance and, thus, to significantly improve the fundamental on-resistance breakdown voltage relationship compared to Si, SiC, and GaN. New device employs high quality SiN gate insulator to reduce leakage current, treatment process for threshold voltage adjustment and the deposition of low-conducting layer to reduce the device capacitance and eliminate electric field peaks. The novel device will allow fabricating 1kV 50A range power converters with conversion efficiency above 90% and conversion frequency above 1 MHz. The highly controllable growth and fabrication processes will ensure high yield exceeding at least 60%. The use of technologies and manufacturing capabilities readily available at the proposer"s facilities guaranties rapid commercialization and insertion of these novel devices leading to transformative changes in the power converters employed by the US NAVY, other DoD branches and in a broad range of commercial applications.