SBIR/STTR Research Award

Low-Cost GaN Substrates

Award identifier 387f73c85b5a764b4bf51dfc2e5fbec11b33d0dfb1a851cf425d2761f48d0d1dAwarding agency Department of Energy · ARPA-E

Award amount

$225,000

Program and phase

SBIR · Phase I

Award year

2014

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Award details

Awarding agency
Department of Energy
Branch
ARPA-E
Recipient company
Soraa
Proposal award date
2014-02-17
Contract end date
2015-02-16
UEI
PZ7CGJJR58C5
Solicitation number
DE-FOA-0000941
Topic code
Not reported

Research abstract

Soraa will develop a cost-effective technique to manufacture high-quality, high-performance gallium nitride (GaN) crystal substrates that are better than today’s GaN crystal substrates, which are expensive and prone to defects. Soraa will also develop pathways to large-area GaN substrates that can handle power switch applications. Substrates are thin wafers of semiconducting material needed for power devices like transistors and integrated circuits. If successful, Soraa will produce GaN crystal substrates that have 100 times fewer defects than conventional GaN substrates, cost eight times less, and are three to four times larger in diameter.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

10 SBIR/STTR records share this UEI (2009–2014). Reported award amounts total $2,672,695. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, Department of Energy, National Science Foundation

Agency intelligence

Department of Energy

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