Low-Cost GaN Substrates
Award amount
$225,000Program and phase
SBIR · Phase IAward year
2014Award details
- Awarding agency
- Department of Energy
- Branch
- ARPA-E
- Recipient company
- Soraa
- Proposal award date
- 2014-02-17
- Contract end date
- 2015-02-16
- UEI
- PZ7CGJJR58C5
- Solicitation number
- DE-FOA-0000941
- Topic code
- Not reported
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Compact, Efficient, High Power Semiconductor Laser for Undersea Communication
- Compact, Efficient, High Power Semiconductor Laser for Undersea Communication
- Large-Area Semipolar Ammonothermal GaN Substrates for High-Power LEDs
- Solvothermal growth of low-defect-density gallium nitride substrates
- SBIR Phase II:High quality, low cost bulk gallium nitride substrates
Research funding history
10 SBIR/STTR records share this UEI (2009–2014). Reported award amounts total $2,672,695. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, Department of Energy, National Science Foundation