SBIR/STTR Research Award
Solvothermal growth of low-defect-density gallium nitride substrates
Award amount
$100,000Program and phase
STTR · Phase IAward year
2011Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- Soraa
- Proposal award date
- 2011-04-18
- Contract end date
- Not reported
- UEI
- PZ7CGJJR58C5
- Solicitation number
- 2010.B
- Topic code
- AF10-BT28
Research abstract
ABSTRACT: We propose to develop cost and growth-rate models quantifying the capability for Soraa's proprietary SCoRA ammonothermal reactor and associated procedures to produce bulk GaN with low threading dislocation defect concentrations. The new apparatus and methods will enable major improvements in the growth of ultralow defect bulk GaN crystals in high volumes and modest costs. BENEFIT: Foundational substrate technology for next-generation high-power electronics, ultraviolet detectors, laser diodes, and light-emitting diodes.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Low-Cost GaN Substrates
- Compact, Efficient, High Power Semiconductor Laser for Undersea Communication
- Compact, Efficient, High Power Semiconductor Laser for Undersea Communication
- Large-Area Semipolar Ammonothermal GaN Substrates for High-Power LEDs
- SBIR Phase II:High quality, low cost bulk gallium nitride substrates
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Solvothermal growth of low-defect-density gallium nitride substrates
- Low-cost, low-defect Solvothermal growth of large diameter Gallium Nitride substrates
Research funding history
10 SBIR/STTR records share this UEI (2009–2014). Reported award amounts total $2,672,695. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, Department of Energy, National Science Foundation