Compact, Efficient, High Power Semiconductor Laser for Undersea Communication
Award amount
$149,061Program and phase
SBIR · Phase IAward year
2012Award details
- Awarding agency
- Department of Defense
- Branch
- Navy
- Recipient company
- Soraa
- Proposal award date
- 2011-10-11
- Contract end date
- Not reported
- UEI
- PZ7CGJJR58C5
- Solicitation number
- 2011.2
- Topic code
- N112-167
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Low-Cost GaN Substrates
- Compact, Efficient, High Power Semiconductor Laser for Undersea Communication
- Large-Area Semipolar Ammonothermal GaN Substrates for High-Power LEDs
- Solvothermal growth of low-defect-density gallium nitride substrates
- SBIR Phase II:High quality, low cost bulk gallium nitride substrates
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
Research funding history
10 SBIR/STTR records share this UEI (2009–2014). Reported award amounts total $2,672,695. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, Department of Energy, National Science Foundation