SBIR/STTR Research Award
High-Quality AlGaN Epitaxial Films on GaN and AlN Substrates
Award amount
$375,000Program and phase
STTR · Phase IIAward year
2013Award details
- Awarding agency
- Department of Defense
- Branch
- Army
- Recipient company
- ADROIT MATERIALS, INC.
- Proposal award date
- 2013-10-31
- Contract end date
- 2014-10-31
- UEI
- LSK7AWA81NA1
- Solicitation number
- 2012.A
- Topic code
- A12a-T019
Research abstract
The objective of proposed work is to demonstrate the feasibility of obtaining AlGaN films of any composition with dislocation densities below 1x106 cm-2 on native nitride substrates either by sustaining a pseudomorphic state or by reducing the number of threading dislocations by specific stress relieving schemes at the interfaces or within the thickness of the stress management layers.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Novel Quantum Sensors Based on AlN
- Solar blind UVC detectors for efficient plume detection
- MMICs on Single Crystal AlN for Extreme RF Systems
- SOLAR-BLIND UVC AND VUV DETECTORS
- Solar-blind UVC detectors for efficient plume detection
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- High Quality, Low Cost, and High Purity AlGaN Epitaxy with Reduced Surface Dislocation Density
- HOVPE Growth of High Quality AlGaN on AlN substrates
- High-Quality AlGaN Epitaxial Films on GaN and AlN Substrates