High Quality, Low Cost, and High Purity AlGaN Epitaxy with Reduced Surface Dislocation Density

Aluminum Gallium Nitride (AlGaN) has broad dual use applications for power transistors, high frequency transistors, high power Schottky barrier diodes, and solar-blind detectors, as well as ultra-violet laser diodes and ultra-violet light emitting diodes. This unique material system spans the capabilities that lie between Gallium Nitride (GaN) and Aluminum Nitride (AlN), enabling custom tailored performance for many device parameters. As an example, AlGaN optoelectronic devices can be optimized for an exact wavelength of operation, or one can make nuanced adjustments of current and voltage characteristics to enable maximized high power operation for AlGaN electronic devices. Kyma Technologies, a domestic leader in AlN and GaN materials production, proposes to extend their existing AlGaN, GaN, and AlN crystal growth experience to conduct additional feasibility studies of AlGaN materials and to develop crystal growth strategies that will achieve the Army"s stated goal of high quality AlGaN over a range of alloy concentrations. Kyma"s proposal supports a domestic manufacturing capability that will satisfy the cost and scalability requirements that a commercial materials market demands, as well as produce the demanding materials requirements, such as low defect density, high optical transparency, and exceptional material purity that are required for today"s high performance devices.