Thick Film Growth of GaN for Nonlinear Optics

There is an intense search for new nonlinear optical (NLO) materials suitable to wider wavelength ranges, to greater optical intensities and higher output and efficiency. Quasi-phase matched semiconductors show potential, particularly periodic orientation (PO) of thick gallium nitride films (PO-GaN) to meet many of the NLO device requirements if new methods of PO crystal growth are developed, especially hydride vapor epitaxy (HVPE). For the proposed project, Physical Sciences, Inc. (PSI) will team with the GaN Lab at Ostendo Technologies, a premier developer and provider of III-nitride films and devices, and a world leader in the methods of HVPE since 1997. PSI has developed orientation-patterned (OP) GaAs crystals for applications in NLO devices, and is now a commercial supplier of OP-GaAs. The combined team will provide a technical effort comprehensive from crystal growth to NLO devices and laser systems as well as a strong pathway to commercialization of the developed NLO devices in Phase III. In Phase I the team will demonstrate HVPE methods to grow nitrogen- and gallium-polar films at nearly equal rates to moderate thicknesses and characterize the films. Phase II will optimize the HVPE methods for much thicker PO films and demonstrate NLO devices fabricated from these films.