SBIR/STTR Research Award
Millimeter Thick, Periodically Oscillating Polarity GaN Grown via HVPE
Award amount
$1,545,427Program and phase
SBIR · Phase IIAward year
2015Award details
- Awarding agency
- Department of Defense
- Branch
- Navy
- Recipient company
- KYMA TECHNOLOGIES, INC.
- Proposal award date
- 2015-03-11
- Contract end date
- 2018-12-13
- UEI
- GDV6R1VLRVN7
- Solicitation number
- 2013.1
- Topic code
- N131-068
Research abstract
Gallium Nitride is a wide bandgap, highly transparent material with a second order non-linear susceptibility similar to that of LiNbO3 with high thermal conductivity. As such, it is of interest for use as a quasi-phase matching material for several high power nonlinear devices. Kyma Technologies will grow thick (~1mm) periodically oriented GaN crystals using hydride vapor phase epitaxy (HVPE) and ascertain their applicability for use in various infrared nonlinear devices.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Low-Cost Manufacturing of High Quality GaN Substrates
- Pulsed Sputter Deposition (PSD) for Efficient Doping for GaN HEMT Contacts
- HVPE-Based Gallium Oxide Epiwafer Development
- High Responsivity Optical GaN Switch
- Radiation-Tolerant Vertical GaN Diodes
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Millimeter Thick, Periodically Oscillating Polarity GaN Grown via HVPE
- Thick Film Growth of GaN for Nonlinear Optics
Research funding history
83 SBIR/STTR records share this UEI (2000–2024). Reported award amounts total $34,128,798. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration