Thin-Film Multiferroic Heterostructures for Frequency-Agile RF Electronics

Microwave technologies have found a broad range of and growing applications, especially in the area of communications. Many microwave tunable devices are bulky and incompatible with RF semiconductor IC technology. The slow tuning response speeds, high material losses, and device noise at higher frequencies have also limited their widespread applications.Recent advances in processing complex oxide and multiferroic thin films present the opportunity for state-of-the-art microwave components. These technologies open the way for establishing electrically tuned ferromagnetic RF resonance devices with reduced bias fields, faster tuning speed, and minimized device size. During Phase I, Boston Applied Technologies Incorporated (BATi) together with University of Minnesota (UMN) have been working diligently on the fabrication and evaluation of multiferroic heterostructures and device designs and simulations. In this Phase II proposal, BATi and UMN propose to continue our efforts on developing and further optimizing high quality multiferroic thin film heterostructures through nano-engineering of interlayers. A prototype of isolator operating at frequencies above 10 GHz, exhibiting low insertion loss, and tunable with moderate electric fields will be fabricated and evaluated.