SBIR/STTR Research Award

Thin-Film Multiferroic Heterostructures for Frequency-Agile RF Electronics

Award identifier 9cfea6171d6b1bcee2751109660b4bd7e45c223b39f358bd55025c79c78b64bcAwarding agency Department of Defense · Army

Award amount

$100,000

Program and phase

STTR · Phase I

Award year

2011

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Award details

Awarding agency
Department of Defense
Branch
Army
Recipient company
BOSTON APPLIED TECHNOLOGIES, INCORPORATED
Proposal award date
2011-09-06
Contract end date
Not reported
UEI
KK63F8EFKJW7
Solicitation number
2011.A
Topic code
A11a-T018

Research abstract

In this proposal, Boston Applied Technologies, Incorporated (BATi) together with University of Minnesota proposes to develop a high quality epitaxially grown multiferroic thin film heterostructure through a simple wet chemical route, which has been demonstrated the capability of growing high quality multilayer films through nano-engineering and introducing proper buffer layers. The feasibility of developing of an electrically tunable RF isolator utilizing of the magnetoelectric coupling effect of the heterostructure will be evaluated.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

67 SBIR/STTR records share this UEI (2002–2015). Reported award amounts total $14,936,654. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation

Agency intelligence

Department of Defense

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