SBIR/STTR Research Award

Inverse Compton Source for Extreme Ultraviolet Lithography

Award identifier 156f615ad34e6089d327472b5d488b80db9d61b91a75ec7b7db7de4ae1fc5a9fAwarding agency Department of Energy

Award amount

$999,930

Program and phase

SBIR · Phase II

Award year

2013

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Award details

Awarding agency
Department of Energy
Branch
Not reported
Recipient company
RADIABEAM TECHNOLOGIES, LLC
Proposal award date
2013-04-09
Contract end date
Not reported
UEI
Q6NDLV47NBT5
Solicitation number
DE-FOA-0000782
Topic code
09e

Research abstract

Extreme Ultraviolet Lithography (EUVL) is a critical emerging technology to enable fabrication of integrated circuit with sub-20 nm features. However, the implementation and wider adoption of EUVL is limited by the lack of compact, tunable, narrow-band, directional high power sources in the EUVL wavelength range. The present state-of-the-art for EUV R & amp;D is plasma based sources at 13.6 nm that are not directional, require frequent repair, and are not easily scalable to shorter wavelengths. This project seeks to address this problem by developing a high duty cycle Inverse Compton Scattering (ICS) source, based on the scattering of a re-circulated/re-amplified 10 m laser off a multi-bunch train electron beam produced by a photoinjector in a novel active multi-pass intracavity. In Phase I, a thorough design study of a re-circulated ICS experiment at ATF BNL has been conducted. All system components have been specified for implementation in Phase II. The most risky aspect of the Phase I design study was demonstrating the feasibility of CO2 pulse re-amplification at 25-ns intervals with the equipment presently available at the ATF BNL (4 atm. amplifier). This milestone was successfully accomplished through in depth numerical simulation of the amplifier media performance in a pulse train regime. An unexpected finding was overall ICS system improved performance at longer laser pulses. In Phase II, a scaled demonstration experiment of re-circulated ICS will be carried out at the Accelerator Test Facility at BNL. If successful, the output would substantially increase prospects of commercialization and long overdue market acceptance of ICS based compact light sources. Commercial Applications and Other Benefits: The primary application targeted by the proposed system, Extreme Ultraviolet Lithography (EUVL), is on the cusp of becoming a billion-dollar industry; but, one for which the current EUV sources are inadequate for the full range of manufacturing processes and diagnostics. The technology scales well to the X-ray range, where there are a number of other medical and industrial applications.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

190 SBIR/STTR records share this UEI (2004–2025). Reported award amounts total $96,783,846. Reported amounts are not federal obligations.

Phases: Phase I, Phase II, Phase II – Direct to Phase II

Agencies: Department of Energy, Department of Defense, Department of Homeland Security, National Science Foundation, Department of Health and Human Services, Department of Commerce

Agency intelligence

Department of Energy

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