SBIR/STTR Research Award
Innovative Polishing Technology for Fabrication of High Performance Epi-ready GaSb Substrates
Award amount
$99,994Program and phase
STTR · Phase IAward year
2013Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- Sinmat Inc
- Proposal award date
- 2012-11-01
- Contract end date
- 2013-04-30
- UEI
- EKDLPTKX33M6
- Solicitation number
- 2012.A
- Topic code
- MDA12-T003
Research abstract
Antimony containing III-V semiconducting compounds are particularly attractive for the fabrication of a wide variety of electronic and optoelectronic devices such as photo detectors operating in the long wave infrared wavelength (12-32µm) range. The production of epi quality GaSb wafers still remains one of the important problems for rapid commercialization of GaSb devices. Sinmat Inc. proposes a novel chemical mechanical smoothening and passivation process that is expected to lead to ultra-smooth (<2) GaSb epi-ready passivated surface in a reliable consistent manner.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Novel Reactive Defect Reduction Polishing Technology for Scalable Production of ElectronicDiamond Wafers
- Novel Ultra-High Rate Finishing Processes for Production of 100 mm Epi-ready GaN Substrates Title on abstract leaves out the word &quot;Novel&quot;)
- Efficient Manufacturing of Low Defect Density SiC Substrates using a Novel Defect Capped Planarization Assisted Growth (DC-PAG) Method
- Innovative Polishing Technology for Fabrication of High Performance Epi-ready GaSb Substrates
- Production of Reduced Defect Density (112) Silicon Wafers Utilizing Ultra- Gentle, Chemical Mechanical Smoothening (CMS) Process
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Advanced Infrared Focal Plane Arrays with Strained Layer Superlattice Detectors on Digital-Pixel Readout Integrated Circuits
- An improved passivation process for the fabrication of high performance antimony based III-V superlattice materials
- Advanced Infrared Focal Plane Arrays with Strained Layer Superlattice Detectors on Digital-Pixel Readout Integrated Circuits
- Defect Passivation for Improved Material Properties in Ga-free and Ga-based SLS
Research funding history
42 SBIR/STTR records share this UEI (2002–2016). Reported award amounts total $12,792,050. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Science Foundation, Department of Energy