SBIR/STTR Research Award

Software for Modeling and Design of Robust GaAs Photocathodes

Award identifier 4cea18d37248d2bcb1cc0c7e405f40ddfd0ce186fa715b510bf16155fe62e3c7Awarding agency Department of Energy

Award amount

$1,009,791

Program and phase

SBIR · Phase II

Award year

2012

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Award details

Awarding agency
Department of Energy
Branch
Not reported
Recipient company
TECH-X CORPORATION
Proposal award date
2012-08-08
Contract end date
2014-08-07
UEI
VJ7GKNR3MEM3
Solicitation number
DE-FOA-0000676
Topic code
14 a

Research abstract

The successful operation of the Department of Energy X-ray light sources, free electron laser, and linear accelerator facilities depends on providing reliable photocathodes for generation of low emittance, high-brightness electron beams using conventional lasers. Experiments on GaAs-based photocathodes have demonstrated the potential to generate high-brightness, unpolarized and polarized, electron beams with low emittance. However, high-fidelity simulation capabilities are needed to design and engineer robust GaAs photocathodes that meet or exceed the desired operational parameters for research facilities run by the Department of Energy. Three dimensional, particle-in-cell codes can accurately simulate the evolution of electron beams in accelerator cavities but lack algorithms for modeling the physics of electron emission from photocathodes. We will develop and implement software code for modeling electron emission from GaAs photo cathodes within the VORPAL Computational Framework to enable simulations of the complete electron generation process including creation of electron-hole pairs due to photon absorption, transport of charge carriers, and emission from negative electron affinity surfaces. We investigated and implemented proof-of-concept algorithms for photon absorption distributions and a three band model for electron transport in GaAs. Results from VORPAL transport simulations with the prototyped algorithms are in agreement with existing experimental and numerical data. These results demonstrate the importance of the new capabilities for high-fidelity modeling of GaAs photocathodes. We will implement accurate modeling of electron emission, surface band banding potentials, effects of surface roughness, localized states, and varying electron affinity to enable detailed investigation of electron emission from GaAs via simulations. We have designed experiments to collect data for validation of the implemented models. We will run extensive simulations to compare with experimental data and investigate time response, emittance, and energy distribution properties of electrons emitted from GaAs. Commercial Applications and Other Benefits: The proposed code for high-fidelity simulations of GaAs photocathodes will directly benefit scientists designing electron sources for industrial and modern research facility applications. The new simulation capabilities will also allow the existing code VORPAL (already commercially distributed) to increase its potential for generating further commercial revenue when used in the industry to design photocathodes and semiconductor devices.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

299 SBIR/STTR records share this UEI (1994–2025). Reported award amounts total $109,779,617. Reported amounts are not federal obligations.

Phases: Phase I, Phase II, Phase II – Direct to Phase II

Agencies: Department of Energy, Department of Defense, National Aeronautics and Space Administration, Department of Education, Department of Commerce

Agency intelligence

Department of Energy

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