SBIR/STTR Research Award

Software for Modeling and Design of Robust GaAs Photocathodes

Award identifier e1fb65914bf77b3d7caf4872071e8ab3f6b00278db734b99864274642d0b81c7Awarding agency Department of Energy

Award amount

$149,974

Program and phase

SBIR · Phase I

Award year

2011

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Award details

Awarding agency
Department of Energy
Branch
Not reported
Recipient company
TECH-X CORPORATION
Proposal award date
2011-06-17
Contract end date
2012-05-16
UEI
VJ7GKNR3MEM3
Solicitation number
DE-FOA-0000413
Topic code
14 a

Research abstract

The successful operation of the Department of Energy (DOE) X-ray light sources, free electron laser (FEL), and linear accelerator facilities depends on providing reliable photocathodes for generation of low emittance, high-brightness electron beams using conventional lasers. Experiments on GaAs-based photocathodes have demonstrated the potential to generate high-brightness, unpolarized and polarized, electron beams with low emittance. However, high-fidelity simulation capabilities are needed to design and engineer robust GaAs photocathodes that meet or exceed the desired operational parameters for the DOE facilities. Three dimensional, particle-in-cell (PIC) codes can accurately simulate the evolution of electron beams in accelerator cavities but lack algorithms for modeling the physics of electron emission from photocathodes. We will develop and implement software code for modeling electron emission from GaAs photocathodes within the VORPAL Computational Framework to enable simulations of the complete electron generation process including creation of electron-hole pairs due to photon absorption, transport of charge carriers, and emission from negative electron affinity surfaces.Commercial Applications and Other Benefits: The proposed code for high-fidelity simulations of GaAs photocathodes will directly benefit DOE scientists designing electron sources for its user facilities. The new simulation capabilities will also allow the existing PIC code VORPAL (already commercially distributed) to increase its potential for generating further commercial revenue when used in the industry to design semiconductor devices.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

299 SBIR/STTR records share this UEI (1994–2025). Reported award amounts total $109,779,617. Reported amounts are not federal obligations.

Phases: Phase I, Phase II, Phase II – Direct to Phase II

Agencies: Department of Energy, Department of Defense, National Aeronautics and Space Administration, Department of Education, Department of Commerce

Agency intelligence

Department of Energy

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