SBIR/STTR Research Award

Monolithically integrated AlN/GaN electronics for harsh environments

Award identifier 2accff072688beb93e556f88188e8489726281abc7947daa05e9bf9e7c7e877bAwarding agency National Aeronautics and Space Administration

Award amount

$96,891

Program and phase

SBIR · Phase I

Award year

2012

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Award details

Awarding agency
National Aeronautics and Space Administration
Branch
Not reported
Recipient company
SVT ASSOCIATES INC
Proposal award date
2012-02-13
Contract end date
2012-08-13
UEI
MLVQMLJLC139
Solicitation number
Not reported
Topic code
S5.05

Research abstract

Recently, resonant-tunneling-diode (RTD) based circuits employing monolithically-integrated RTD on high electron mobility (HEMT) structures have been developed in a number of III-V systems in order to improve operational speed. The main goal of this program is to develop wide temperature-operable radiation hard monolithically-integrated electronics based on wide bandgap III-nitride epitaxial structures. In the Phase I program, we propose to develop same-wafer discrete devices (capacitors, HEMTs, and RTDs) by employing a novel multi-layer AlN/GaN heterostructure design, and to demonstrate the radiation hardness of these devices

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

165 SBIR/STTR records share this UEI (1990–2014). Reported award amounts total $29,785,067. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation

Agency intelligence

National Aeronautics and Space Administration

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