Monolithically integrated AlN/GaN electronics for harsh environments
Award amount
$96,891Program and phase
SBIR · Phase IAward year
2012Award details
- Awarding agency
- National Aeronautics and Space Administration
- Branch
- Not reported
- Recipient company
- SVT ASSOCIATES INC
- Proposal award date
- 2012-02-13
- Contract end date
- 2012-08-13
- UEI
- MLVQMLJLC139
- Solicitation number
- Not reported
- Topic code
- S5.05
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Efficient EMI/RFI attenuation by GaN-based coating on spinel windows
- GaAsSb/AlGaAsP Superlattice Polarized Electron Source
- Plasmonic Enhanced Type-II Superlattice Focal Plane Arrays
- GaAsSb/AlGaAs Superlattice High-Polarization Electron Source
- GaAsSb/AlGaAsP Superlattice Polarized Electron Source
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Fault Management Technologies - Metrics Evaluation and V&V
- Model-Based Off-Nominal State Isolation and Detection System for Autonomous Fault Management
- Standardization of Fault Management Techniques and Activities with TEAMS
- Fault Management Simulation and Visualization Tool
- Fault Management Technologies
Research funding history
165 SBIR/STTR records share this UEI (1990–2014). Reported award amounts total $29,785,067. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation