Wafer-level Short Wave Infrared (SWIR) Micro-Camera

Shortwave Infrared (SWIR) imaging has significant advantages over image intensifiers for low light level applications. Although the low light level performance with SWIR imagers has moved towards parity with image intensifiers, widespread deployment has not been possible because of severe SWaP and cost hurdles. We lay out the technological and manufacturing imperatives required to maintain high performance levels, and make significant advances towards SWaP and cost reductions. These imperatives are broken out into technical objectives spanning Phase I, II and III of an SBIR program. Phase I will focus on using NVESD models to set targets for different aspects of sensor design (pitch, noise, optics, etc.). We will also develop approaches for achieving detector targets for noise and resolution. Reduction of detector fabrication costs through use of 6 InP wafer processing will be assessed. Thermo-mechanical models of encapsulant packaging materials will be developed