Wafer-level Short Wave Infrared (SWIR) Micro-Camera

This proposed effort focuses on the development and demonstration of an extended short wavelength infrared (eSWIR) micro-camera that is capable of identifying targets at ranges of 100 to 1000 meters with a 40 degree field of view, through a collaborative effort between the proposing small business Episensors, Inc., BAE Systems and Digital Design Corporation. Innovative materials and device processing methods were modeled in Phase I, and indicate that HgCdTe detector arrays can be employed to improve performance over conventional InGaAs-based systems while simultaneously reducing the array cost. By utilizing HgCdTe arrays, the camera system developed in this effort will be able to image out to 2.5 micron wavelength, while InGaAs arrays are unable to image efficiently above 1.7 micron. This will allow the system to collect additional signal from nightglow and facilitate covert communications and tracking in the 1.7 to 2.5 micron range, improving its performance and functionality. Camera costs will further be reduced by utilizing innovative component integration and moldable optics manufacturing, with a targeted reduction in cost of 10x over traditional SWIR camera systems. These integration and manufacturing processes will also allow for a fully integrated camera system size of 20 cm3 to be achieved.