Ultra High Performance Radar Absorbing Material for Anechoic Chambers (1000-200)

ABSTRACT: SI2 Technologies, Inc. (SI2) proposes to design and develop a high performance, structural radar absorbing material (RAM) from Direct Write printed product, for use in the Benefield Anechoic Facility (BAF). SI2"s innovative RAM is manufactured using a digital process which enables the creation of 3D absorbers of any size, shape or geometric orientation to be manufactured. The Direct Write process also allows different concentrations of resistive material to be deposited within the absorber, further increasing the design space by enabling multi-tiered or layered designs. In Phase I, SI2 will design and model a RAM structure that integrates with the Direct Write process to not only meet the electrical and fire resistance requirements for use in the BAF but also to provide robust structural and damage resistant properties, due to its unique design. In the follow-on Phase II, SI2 will build on the Phase I results to refine and optimize the design of the RAM. Prototype RAM articles will be manufactured to support RF evaluation in an anechoic chamber. BENEFIT: The initial assessment of the proposed structural RAM, manufactured from Direct Write inkjet printed material, indicates the potential of the technology to be used in applications beyond those targeted for the BAF in this Phase I effort. With the continued evolution of low observable requirements on legacy and future aerospace vehicles, new technologies are required to push the design and manufacture beyond state of the art as new threats emerge. LO designs are frequently limited by the ability of manufacturing processes, such as dip or flow coating, to create the proper impedance matching due to their inherent inability to locally tailor the RF response. SI2"s use of Direct Write deposition to manufacture complex, highly tailored, net shape RAM will enable designers of low observable structures almost limitless design options.