SBIR/STTR Research Award

Large Diameter GaSb Substrate for Large Format SLS FPA Applications

Award identifier f356233d56a792d8678904b9edae637ab443bf23dde61673c6d0f416c2f36e97Awarding agency Department of Defense · Missile Defense Agency

Award amount

$100,000

Program and phase

SBIR · Phase I

Award year

2011

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
INTELLIGENT EPITAXY TECHNOLOGY, INC.
Proposal award date
2011-08-01
Contract end date
Not reported
UEI
N1ECEJL9LMM7
Solicitation number
2010.3
Topic code
MDA10-009

Research abstract

This Phase I SBIR effort will seek to develop high performance superlattice infrared focal plane array technology by establishing a 4"GaSb substrate manufacturing line based in Texas. Under this program, IntelliEPI proposes to develop 4"GaSb crystal pulling capability based on the vertical gradient freeze method. In addition, a double-side polishing capacity for GaSb up to 4"in diameter will be established. This will provide a supply of high-quality, large diameter substrates to support epitaxial growth development.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

9 SBIR/STTR records share this UEI (2005–2011). Reported award amounts total $1,124,874. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense

Agency intelligence

Department of Defense

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