SBIR/STTR Research Award
Epi Ready InSb Substrate for HgCdTe Infrared Detectors by MBE
Award amount
$70,000Program and phase
SBIR · Phase IAward year
2010Award details
- Awarding agency
- Department of Defense
- Branch
- Army
- Recipient company
- INTELLIGENT EPITAXY TECHNOLOGY, INC.
- Proposal award date
- 2010-02-25
- Contract end date
- 2010-08-25
- UEI
- N1ECEJL9LMM7
- Solicitation number
- 2009.2
- Topic code
- A09-094
Research abstract
This Phase I SBIR effort will evaluate the preparation of epi-ready 211B InSb substrate to be used as starting substrate for the growth of high quality HgCdTe epi materials. The InSb substrate will be prepared via production III-V Molecular Beam Epitaxy (MBE) reactor. The 211B InSb substrate is chosen because it''s lattice matched to HgCdTe. Texas State University and Teledyne will assist with the growth of HgCdTe on the especially prepared InSb substrate for evaluation of the InSb substrate preparation. Materials characterization will be performed to evaluate the quality of HgCdTe epi materials grown on InSb. Critical materials development issues will be identified.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Advanced Ternary SLS for 2-Color LW/LW FPA for Interceptor Seekers
- Large Diameter GaSb Substrate for Large Format SLS FPA Applications
- Dual Band MWIR/LWIR SLS FPA
- Development of Radiation Hardened Type II SLS for Smart IR FPA for Space Applications
- Type II SLS for 2-Color FPA for Interceptor Seekers
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
Research funding history
9 SBIR/STTR records share this UEI (2005–2011). Reported award amounts total $1,124,874. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense