SBIR/STTR Research Award
Development of Radiation Hardened Type II SLS for Smart IR FPA for Space Applications
Award amount
$100,000Program and phase
SBIR · Phase IAward year
2010Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- INTELLIGENT EPITAXY TECHNOLOGY, INC.
- Proposal award date
- 2010-05-03
- Contract end date
- 2010-11-02
- UEI
- N1ECEJL9LMM7
- Solicitation number
- 2009.3
- Topic code
- MDA09-014
Research abstract
This Phase I SBIR effort will develop low dark-current and high radiation-hardness infrared detector technology based on unipolar barrier structure Type II strained-layer superlattices. The design architectures and process technologies developed to minimize dark current are expected to enhance device performance, especially in the presence of the degradation mechanisms anticipated in a hostile radiation environment. The rad-hard SLS design efforts will be done by leading experts at the University of New Mexico (UNM) and Raytheon Vision Systems (RVS). The advanced Sb-based SLS MBE will be done by IntelliEPI using proprietary in-situ tools to characterize and optimize the growth. Device fabrication and testing will be done by UNM and RVS, with radiation exposure performed by Air Force Research Laboratory, Kirtland Air Force base.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Advanced Ternary SLS for 2-Color LW/LW FPA for Interceptor Seekers
- Large Diameter GaSb Substrate for Large Format SLS FPA Applications
- Dual Band MWIR/LWIR SLS FPA
- Type II SLS for 2-Color FPA for Interceptor Seekers
- Epi Ready InSb Substrate for HgCdTe Infrared Detectors by MBE
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Development of Advanced Barrier Device for Smart IR FPA Space Applications
- Large-Format Dual-Use Radiation-Hard ROIC for IRFPAs and Star-Trackers
- Development and Demonstration of High-Performance InAs/GaSb Superlattice Long Wavelength Infrared Focal Plane Arrays through Improved Sidewall Passiva