SBIR/STTR Research Award

Improved Design of Radiation Hardened, Wide-Temperature Analog and Mixed-Signal Electronics

Award identifier c6807097c215b6d6f1591cfe69b6be2b7949ac31e25f8dbd069927aeaded0b0eAwarding agency National Aeronautics and Space Administration

Award amount

$749,850

Program and phase

SBIR · Phase II

Award year

2011

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Award details

Awarding agency
National Aeronautics and Space Administration
Branch
Not reported
Recipient company
CFD Research Corporation
Proposal award date
2011-06-01
Contract end date
2014-08-28
UEI
V3KCP1HNFM33
Solicitation number
Not reported
Topic code
X1.03

Research abstract

NASA space exploration missions require the electronics for avionic systems, components, and controllers that are capable of operating in the extreme temperature and radiation environments of space and planetary surfaces. To design wide-temperature, radiation-hardened (rad-hard) electronics and predict the characteristics and reliability in these extreme environments, advanced models and simulation tools are required at multiple levels. Analog and mixed-signal circuits for space exploration have not been adequately addressed to date. The proposed project aims to design, develop, validate, and demonstrate novel Radiation Hardened By Design (RHBD) analog/mixed-signal, RF and digital integrated circuits (ICs) aimed for application in NASA relevant extreme environments. In Phase 1, CFDRC, in collaboration with Georgia Tech, accomplished the following: (1) enhanced and demonstrated CFDRC's unique physics-based mixed-mode simulation tools (NanoTCAD coupled with Cadence Spectre) for predicting transient radiation response of benchmark analog circuits based on silicon-germanium (SiGe) BiCMOS technology; (2) leveraged experimental radiation/temperature data collected under the NASA Exploration Technology Development Program (ETDP) SiGe project to validate new low-T device physics models in NanoTCAD and understand associated physical phenomena; and (3) developed preliminary RHBD concepts for single-event hardening, including the novel inverse-mode cascode (IMC) SiGe HBT. In Phase 2, we will demonstrate and validate the improved physics-based models for temperature range from -230<SUP>o</SUP>C to +130<SUP>o</SUP>C, and apply them to evaluate and develop RHBD designs over the expected operating range. New RHBD devices employed in analog, RF and digital circuits will be fabricated in prototype chips and tested over a wide temperature range and in a radiation environment, and delivered as a component library for NASA use.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

947 SBIR/STTR records share this UEI (1987–2026). Reported award amounts total $350,893,199. Reported amounts are not federal obligations.

Phases: Phase I, Phase II, Phase II – Direct to Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Health and Human Services, National Science Foundation, Department of Commerce, Department of Energy

Agency intelligence

National Aeronautics and Space Administration

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