SBIR/STTR Research Award

Unconditionally Stable Low Dropout Regulators for Extreme Environments

Award identifier e4b199c2c5f060d9d1f87d0fb99b1182bcfe2799d4b752ed433da74e8c0b35d6Awarding agency National Aeronautics and Space Administration

Award amount

$625,906

Program and phase

SBIR · Phase II

Award year

2011

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Award details

Awarding agency
National Aeronautics and Space Administration
Branch
Not reported
Recipient company
SJT Micropower
Proposal award date
2011-06-01
Contract end date
2014-03-31
UEI
QWH4TNSN2CY6
Solicitation number
Not reported
Topic code
X1.03

Research abstract

We have developed a low dropout (LDO) regulator using a patented MESFET transistor technology that can be manufactured in commercial CMOS foundries with no changes to the process flow. The regulator is stable under all load conditions without an external compensation capacitor, thereby reducing the mass/volume of the power management system and increasing reliability. The MESFET-based LDO component has very competitive figures of merit (dropout voltage, transient response, power supply rejection) compared to existing components. During Phase 1 we confirmed that the components were unconditionally stable without an external compensation capacitor over the temperature range -196C to +150C and for radiation doses up to 1 Mrad(Si). We shall build on the Phase 1 design effort to demonstrate two fully integrated LDO regulators rated up to 1A with dropout voltages of less than 50 mV. One part will be fabricated using a qualified rad-hard SOI CMOS foundry in collaboration with Honeywell, one of our commercialization partners. The other component will be fabricated using the low-cost/high-volume foundry available from IBM. Both parts will have a nominal output voltage of 1.8V with 1% accuracy. Other designs will target user adjustable voltages in the range 1.2-2V. The feasibility of using the MESFET technology for low voltage applications (e.g. 0.8V) will be explored. All parts will be tested over the temperature range -150C to +150C and after irradiation exposure to a TID of 1 Mrad from a Co-60 source. The enhanced low dose rate sensitivity (ELDRS) of the components will be studied using a low dose rate Cs-137 source. The characteristics of all the components will be documented, and parts made available to NASA and potential customers as deliverables from the Phase 2 activity. We shall work with our commercialization partners to have the LDO regulator design adopted as a licensed 'IP block' and to develop low cost versions for the wider consumer electronics market.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

9 SBIR/STTR records share this UEI (2006–2011). Reported award amounts total $2,674,024. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: National Aeronautics and Space Administration, Department of Health and Human Services, Department of Defense

Agency intelligence

National Aeronautics and Space Administration

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