Unconditionally Stable Low Dropout Regulators for Extreme Environments
Award amount
$625,906Program and phase
SBIR · Phase IIAward year
2011Award details
- Awarding agency
- National Aeronautics and Space Administration
- Branch
- Not reported
- Recipient company
- SJT Micropower
- Proposal award date
- 2011-06-01
- Contract end date
- 2014-03-31
- UEI
- QWH4TNSN2CY6
- Solicitation number
- Not reported
- Topic code
- X1.03
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- CMOS Compatible SOI MESFETs for Radiation Hardened DC-to-DC Converters
- SOI MESFETs for Ultra-Low Power Electronic Circuits
- Unconditionally Stable Low Dropout Regulators for Extreme Environments
- Ultra-Low Power Transceiver for the Medical Implant Communications Service
- Wide Temperature Range DC-DC Boost Converters for Command/Control/Drive Electronics
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Wide Temperature Rad-Hard ASIC for Process Control of a Fuel Cell System
- Improved Design of Radiation Hardened, Wide-Temperature Analog and Mixed-Signal Electronics
- A Reliable Electronic Package for Space Exploration
- Electronics Modeling and Design for Cryogenic and Radiation Hard Applications
Research funding history
9 SBIR/STTR records share this UEI (2006–2011). Reported award amounts total $2,674,024. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: National Aeronautics and Space Administration, Department of Health and Human Services, Department of Defense