SBIR/STTR Research Award

High Temperature Silicon Carbide (SiC) Gate Driver

Award identifier b8359bd3688431290b51d251bcdd00a84717bee7d2448f03ad896a4b8551bb00Awarding agency Department of Defense · Army

Award amount

$69,983

Program and phase

SBIR · Phase I

Award year

2010

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Award details

Awarding agency
Department of Defense
Branch
Army
Recipient company
QORTEK INC
Proposal award date
2010-11-24
Contract end date
2011-05-24
UEI
TLD8L3APDZM3
Solicitation number
2010.2
Topic code
A10-132

Research abstract

The proposed modular high temperature Time Domain Isolated (TDI) Driver is a large step forward in technology, enabling the inherent benefits of current SiC switching devices. Designed to operate in the same environment as the switching devices the gate driver can finally be collocated with the SiC MOSFETs and JFETs being driven. Maximized performance at high speeds, precise switching waveforms at the gates, depletion mode JFET capable, and integrated protection feature within the device will deliver the realization of present and future ARMY requirements.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

136 SBIR/STTR records share this UEI (1996–2025). Reported award amounts total $62,777,779. Reported amounts are not federal obligations.

Phases: Phase I, Phase II, Phase II – Direct to Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration

Agency intelligence

Department of Defense

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