High Temperature Silicon Carbide (SiC) Gate Driver

Various harsh environment applications, such as the propulsion systems of Hybrid Electrical Vehicles (HEV), space systems, and energy exploration applications, require compact and efficient electrical power systems with reduced cooling requirements. Power modules based on Silicon Carbide (SiC) are able to provide the required performance in these application areas due to the unique material properties of SiC. Gate drivers, used to control high power modules, need to be placed physically close to the power switches, where operation at elevated ambient temperatures above 200°C is required and a switching frequency of approximately 200kHz is desired to benefit from the capabilities of SiC power modules. Gate drivers based on silicon devices are generally not able to operate at temperatures above 150°C because of excessive junction leakage currents. We propose to fill the need for high temperature drive electronics by developing compact, high frequency, high temperature silicon carbide (SiC) gate driver modules to control high temperature SiC transistor power modules, capable of operation in the temperature range from -40°C to 200°C, based on our innovative 4H-SiC lateral JFET technology.