SBIR/STTR Research Award

High Temperature Silicon Carbide (SiC) Gate Driver

Award identifier 517bc6f51951161b4acb2ef1ebf78f7cafed3a649645d6509818dc6b7c5a9515Awarding agency Department of Defense · Army

Award amount

$729,991

Program and phase

SBIR · Phase II

Award year

2012

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Award details

Awarding agency
Department of Defense
Branch
Army
Recipient company
Arkansas Power Electronics International, Inc.
Proposal award date
2012-02-16
Contract end date
Not reported
UEI
QZMVB44SHW19
Solicitation number
2010.2
Topic code
A10-132

Research abstract

APEI, Inc."s Phase II goal is to develop, fabricate and test a compact, high temperature, high performance isolated gate drivers utilizing HTSOI integrated circuits, discrete SiC devices, and high frequency coreless magnetics. Additionally, leveraging its existing high performance high temperature SiC power modules, APEI, Inc. will integrate the developed gate driver into this SiC power module and demonstrate a complete high temperature intelligent power module by the end of this Phase II.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

59 SBIR/STTR records share this UEI (2003–2015). Reported award amounts total $19,645,087. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation, Department of Transportation

Agency intelligence

Department of Defense

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